Light-emitting device and method of manufacturing thereof

ABSTRACT

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/902,795, filed Jul. 5 2013, which is incorporated by reference in itsentirety.

TECHNICAL FIELD

This present disclosure relates to a light-emitting device and themethod of manufacturing thereof, and more particularly to alight-emitting device with higher utilizing efficiency of alight-emitting stack and the method of manufacturing thereof.

DESCRIPTION OF BACKGROUND ART

Light-emitting diode (LED) has low power consumption, long operationlifetime, shack-proof, compact size, fast reacting rate and stablelight-emitting wavelength and so on, and therefore LED is suitable forvarious lighting purposes. As shown in FIG. 1, the conventional methodof manufacturing the LED chip comprises forming a light-emitting stack(not shown) on a substrate 101, and forming cutting trenches 103 v, 103h to separate the light-emitting stack and produce a plurality of LEDchips 102. However, because most of the conventional LED chips areproduced by laser-cutting which might produce byproducts when cuttingthe light-emitting stack due to the limitation of the laser beam size,the byproducts could cause current leakage easily. As a result, a widthD of the cutting trenches 103 v, 103 h must maintain at least 20 μm toavoid the above mentioned situations. Nevertheless, if the areas of thecutting trenches can be optimized, the utilized area of thelight-emitting stack can be increased by 25%.

SUMMARY OF THE DISCLOSURE

The present disclosure provides a method of manufacturing alight-emitting device, which comprises providing a first substrate and aplurality of semiconductor stacked blocks on the first substrate, andeach of the plurality semiconductor stacked blocks comprises a firstconductive-type semiconductor layer, a light-emitting layer on the firstconductive-type semiconductor layer, and a second conductive-typesemiconductor layer on the light-emitting layer; wherein there is atrench separating two adjacent semiconductor stacked blocks on the firstsubstrate, and a width of the trench is less than 10 μm; and conductinga first separating step to separate a first semiconductor stacked blockof the plurality of semiconductor stacked blocks from the firstsubstrate and keep a second semiconductor stacked block on the firstsubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows the substrate utilized to produce the conventional LEDchips.

FIGS. 2A-2E show a separating method of the method of manufacturing thelight-emitting device in accordance with one embodiment of the presentdisclosure.

FIG. 2F shows an intermediate step of the method of manufacturing thelight-emitting device in accordance with the first embodiment of thepresent disclosure.

FIGS. 3A-3F show the method of manufacturing the light-emitting devicein accordance with the first embodiment of the present disclosure(parallel connection).

FIG. 4A-4D show the method of manufacturing the light-emitting device inaccordance with the first embodiment of the present disclosure (parallelconnection).

FIG. 5A-5D show the method of manufacturing the light-emitting device inaccordance with the first embodiment of the present disclosure (seriesconnection).

FIGS. 6A-6B show the method of manufacturing the light-emitting devicein accordance with the second embodiment of the present disclosure.

FIGS. 6C-6D show the method of manufacturing the light-emitting devicein accordance with the third embodiment of the present disclosure:

FIGS. 7A-7G show the method of manufacturing the light-emitting devicein accordance with the fourth embodiment of the present disclosure.

FIGS. 7H-7K show the method of manufacturing the light-emitting devicein accordance with the fifth embodiment of the present disclosure.

DETAILED DESCRIPTION OF THE PRESENT DISCLOSURE

The embodiments of the application are illustrated in details, and areplotted in the drawings. The same or the similar parts are illustratedin the drawings and the specification with the same reference numeral.

FIGS. 2A-2E show a separating method of the method of manufacturing thelight-emitting device in accordance with one embodiment of the presentdisclosure. FIGS. 3-5 show the method of manufacturing thelight-emitting device in accordance with the first embodiment of thepresent disclosure, wherein FIGS. 3A-3F and FIG. 4 shows thelight-emitting device formed by the plurality of the light-emittingstacked blocks in parallel connection. FIG. 5 shows the light-emittingdevice formed by the plurality of the light-emitting stacked blocks inseries connection.

As shown in FIG. 2A, a semiconductor stack 202 is formed on the firstsubstrate 201, and the semiconductor stack 202 comprises a firstconductive-type semiconductor layer 202 a, a light-emitting layer 202 bon the first conductive-type semiconductor layer 202 a, and a secondconductive-type semiconductor layer 202 c on the light-emitting layer202 b. The first conductive-type semiconductor layer 202 a and thesecond conductive-type semiconductor layer 202 c have differentelectrical properties, for example, the first conductive-typesemiconductor layer 202 a is n-type semiconductor layer and the secondconductive-type semiconductor layer 202 c is p-type semiconductor layer.The first conductive-type semiconductor layer 202 a, the light-emittinglayer 202 b and the second conductive-type semiconductor layer 202 ccomprise III-V group material, such as AlGaInP series materials orAlGaInN series materials. As shown in FIG. 2B, conducting a patterningstep to form a trench 212 having a width d, and the semiconductor stack202 is patterned to form a plurality of semiconductor stacked blocks231, 232, 233, 234 and 235, that is, the adjacent two semiconductorstacked blocks are separated by the trench 212. In order to increase theutilized area of the semiconductor stack 202, the width d of the trenchcould be as narrow as possible, for example, to be less than 20 μm, andpreferable to be less than 10 μm. In one embodiment, the width d of thetrench 212 is less than 5 μm. The foregoing “patterning” is a processcomprises capping photoresist, photolithography and then etching.However, it is not limited to the method of patterning, and the othermethod, such as directly cutting the semiconductor stack 202 by laser isalso a possible embodiment. Besides, each of the semiconductor stackedblocks has a top-view shape, and the top-view shape comprises a diamond,a square, a rectangle, a triangle or a circle. It should be noted that,the semiconductor stack 202 could grow on the first substrate 201, thatis, the first substrate 201 is a growth substrate of the semiconductorstack 202. However, it-is possible that the semiconductor stack 202 isformed on other growth substrate, and then is transferred to the firstsubstrate 201 by transferring technique. In the latter situation, thereis an adhesive layer (not shown) between the semiconductor stack 202 andthe first substrate 201. The transferring technique is a well-knownknowledge for the person having ordinary skill in the art and it isunnecessary to explain in detail. In another embodiment, after thesemiconductor stack 202 is formed on other growth substrate and thenpatterned to form the plurality of semiconductor stacked blocks 231,232, 233, 234 and 235, the plurality of semiconductor stacked blocks231, 232, 233, 234 and 235 are transferred to the first substrate 201 toform the structure shown in FIG. 2B. Similarly, it could furthercomprise an adhesive layer (not shown) between the semiconductor stakedblocks 231, 232, 233, 234, 235 and the first substrate 201. After that,a first sacrificial layer 211 is formed to facilitate a separating stepon the semiconductor stacked block which will be removed. In thisembodiment, the semiconductor stacked blocks to be removed are thesemiconductor stack blocks 232 and 234. The first sacrificial layer 211could be formed by forming a layer of the material of the firstsacrificial layer 211 on the surfaces of the plurality of thesemiconductor stacked blocks, and then selectively removing the firstsacrificial layer 211 on the semiconductor stack blocks 231,233 bylithography and etching process while keeping the first sacrificiallayer 211 on the semiconductor stack blocks 232, 234 which will beremoved in the following separating step. It should be noted that, theperson having ordinary skill in the art realizes the order of theprocesses could be different from the above-mentioned situation. Thatis, the patterning process for patterning the semiconductor layer 202 toform the plurality of semiconductor stacks 231, 232, 233, 234 and 235 bya lithography or etching could be finished after forming the firstsacrificial layer 211 on the positions of the semiconductor stackedblocks which will be removed in the following separating step (such asthe positions on the semiconductor stacked blocks 232, 234 in theembodiment). The material of the first sacrificial layer 211 could beconductive material or insulating material. The conductive materialcould be, for example, metal oxide, metal or alloy, wherein the metaloxide could be indium tin oxide (ITO), indium oxide (InO), tin oxide(SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO) or zinc oxide(ZnO); the metal could be Al, Au, Pt, Zn, Ag, Ni, Ge, In, Sb, Ti, Pb, Cuor Pd; and the alloy could be the alloy containing more than one of theforegoing metals. The insulating material could be, for example, polymermaterial, oxide or nitride (SiN_(x)), wherein the polymer material couldbe BCB, epoxy and so on; the oxide could be silicon oxide (SiO₂) andaluminum oxide (Al₂O₃); the nitride could be silicon nitride (SiN_(x)).The person having ordinary skill in the art could choose the material ofthe first sacrificial layer 211 based on the requirement of thefollowing procedures and the electrical conductive property or thetransparent property of the product. As shown in FIG. 2C, the separatingstep comprises providing a second substrate 221, and bonding the secondsubstrate 221 to the first sacrificial layer 211 . The second substrate221 could be a transparent substrate or an opaque substrate. Thetransparent substrate, for example, could be glass, sapphire (Al₂O₃),CVD diamond; the opaque substrate, for example, could be siliconsubstrate, aluminum nitride substrate or ceramic substrate. The personhaving ordinary skill in the art could choose the material of the secondsubstrate 221 based on the requirement of the following procedures andthe electrical conductive property or the transparent property of theproduct. And then, as shown in FIG. 2D, the semiconductor stacked blocks232 and 234 which will be removed are separated from the first substrate201. It is easier to separate the semiconductor stacked blocks 232, 234from the first substrate 201 by irradiating a laser 241 to an interfacebetween the first substrate 201 and the semiconductor stacked blocks232, 234. As mentioned before, the light-emitting layer 202 could alsobe formed on other growth substrate and be transferred to the firstsubstrate 201. In this situation, it could selectively form asacrificial layer (not shown) at first between the first substrate 201and the semiconductor stacked blocks 232, 234 which will be removed inthe following separating step when transferring the semiconductor stack202 to the first substrate 201. The material which is fragile or hasweak bonding ability with the first substrate 201 could be chosen as thematerial of the first sacrificial layer 211, so that the semiconductorstacked blocks 232, 234 can be separated from the first substrate 201easily.

FIG. 2E shows the semiconductor stacked blocks 232, 234 separated fromthe first substrate 201, while the semiconductor stacked blocks 231,233are remained on the first substrate 201 after the separation process. Itshould be noted that either the second substrate 221 and thesemiconductor stacked blocks 232, 234 thereon or the first substrate 201and the semiconductor stacked blocks 231, 233, 235 thereon could be usedin the following method of manufacturing the light-emitting device inthe embodiment.

As shown in FIG. 2F, it takes the first substrate 201 and thesemiconductor stacked blocks 231, 233, 235 thereon for example toexplain the method of manufacturing the light-emitting device of a firstembodiment in the present disclosure. The method of manufacturing thelight-emitting device following the method showing in FIGS. 2A-2Efurther comprises forming a first electrode 231 e 1 on the semiconductorstacked blocks 231 and 233 respectively to electrically connect to thefirst conductive-type semiconductor layers 202 a of the semiconductorstacked blocks 231 and 233 correspondingly. The method further comprisesforming a second electrode 231 e 2 on the semiconductor stacked blocks231 and 233 respectively to electrically connect to the secondconductive-type semiconductor layers 202 c of the semiconductor stackedblocks 231 and 233 correspondingly. The procedure could compriseexposing the first conductive-type semiconductor layer 202 a of eachsemiconductor stacked block (such as the semiconductor stacked blocks231, 233 and so on) by an etching process, and then forming a dielectriclayer 240 on the first substrate 201 and patterning the dielectric layer240 to define the positions of the first electrode 231 e 1 and thesecond electrode 231 e 2 in the dielectric layer 240. Finally, theplurality of first electrodes 231 e 1 and the plurality of secondelectrodes 231 e 2 mentioned above are formed, for example, by filling ametal material in the positions of the first electrode 231 e 1 and thesecond electrodes 231 e 2 in the dielectric layer 240 by metal vapordeposition or electroplating. The redundant metal material above thedielectric layer 240 is then removed by chemical-mechanical polishing(CMP).

The structure and the material of the elements in FIGS. 3A-3C aresimilar to or the same as that in FIG. 2F, and as a result, the firstnumber of element codes of the similar or same elements is changed from“2” to “3”. FIG. 3A shows the first substrate 301 which is provided witha semiconductor stack 302 thereon, and FIG. 3B shows the semiconductorstacked blocks 331,333, and 335 keeping on the first substrate 301 afterthe above mentioned separating method of the semiconductor stack 302.Similarly, it should be noted that for concise explanation, thefollowing description is based on the semiconductor stacked blocks 331and 333. FIG. 3C shows the same result as FIG. 2F, which includesforming the dielectric layer 340, the plurality of first electrodes 331e 1 and the plurality of second electrodes 331 e 2.

FIGS. 3D-3F show the method of manufacturing the element substratedesignated to be bonded to the first substrate 301 in FIG. 3C in orderto form light-emitting device as the final result in the embodiment. Asshown in FIG. 3D, the element substrate 361 is provided and two viaelectrodes 361 TE1 and 361 TE2 are formed in the element substrate 361,wherein each of the via electrodes has a via and a conductive materialfilled therein. The two via electrodes 361TE1 and 361TE2 are designatedto input an external power into the light-emitting device disclosed inthe disclosure. As shown in FIG. 3F, patterned metal layers 361E1 and361E2 are formed on the element substrate 361 to electrically connect tothe two via electrodes 361TE1 and 361TE2 respectively, so that theplurality of semiconductor stacked blocks forms parallel connection. Inother embodiment, the material of the patterned metal layer 361E1, 361E2and the two via electrodes 361TE1, 631TE2 contain the same conductivematerial, that is, when the conductive material forms the patternedmetal layers 361E1 and 361E2, the conductive material also fills in thevia of two via electrodes 361TE1 and 361TE2.

FIGS. 4A-4D show the method of manufacturing the light-emitting devicewith the plurality of the semiconductor stacked blocks in parallelconnection disclosed in the embodiment of the disclosure following whatare shown in FIG. 3C and FIG. 3F. FIG. 4A is the first substrate 301shown in FIG. 3C, and FIG. 4B shows a structure that the first substrate301 is overturned with 180 degree. FIG. 4C is the element substrate 361as shown in FIG. 3F. FIG. 4D shows the light-emitting device as thefinal result in the embodiment after bonding the first substrate 301shown in FIG. 4B to the element substrate 361 shown in FIG. 4C. The topfigure in FIG. 4D shows a partially enlarged image of FIG. 4D. As thepartially enlarged image shown, the patterned metal layer 361E1 isbonded to the first electrodes 331 e 1 of the semiconductor stackedblocks 331, 333, and the patterned metal layer 361E2 is bonded to thesecond electrodes 331 e 2 of the semiconductor stacked blocks 331, 333by the abovementioned aligned bonding. Therefore, the plurality ofsemiconductor stacked blocks, such as the semiconductor stacked blocks331 and 333, have parallel connection.

FIGS. 5A-5D show the method of manufacturing the light-emitting devicewith the plurality of the semiconductor stacked blocks in seriesconnection disclosed in the embodiment of the disclosure following whatare shown in FIG. 3C and FIG. 3F. Similarly, FIG. 5A shows the structurewith the first substrate 301 shown in FIG. 3C, and FIG. 5B shows astructure with the first substrate 301 overturned for 180 degree. FIG.5C is the element substrate 361 with patterned metal layers 361S1,361S2, 361S3 and 361S4 thereon, and two via electrodes 361TE1, 361TE2designated to input an external power into the light-emitting devicedisclosed in the disclosure, are in the element substrate 361 and underthe patterned metal layer 361S1, 362S2 respectively. FIG. 5D shows thelight-emitting device as the final result in the embodiment afterbonding the first substrate 301 shown in FIG. 5B to the elementsubstrate 361 shown in FIG. 5C. The bottom figure in FIG. 5D shows apartially enlarged image of FIG. 5D. As the partially enlarged imageshows, the patterned metal layers 361S1, 361S2, 361S3, and 361S4 arebonded to the first electrodes 331 e 1 and the second electrodes 331 e 2of the semiconductor stacked blocks 331,333 and the other semiconductorstacked blocks of the plurality of semiconductor stacked blocks by theabovementioned aligned bonding. Therefore, the plurality ofsemiconductor stacked blocks, such as the semiconductor stacked blocks331 and 333, has series connection.

Although the first embodiment mentioned above is based on FIG. 2F andtaking the first substrate 201 and the semiconductor stacked blocks 231,233 thereon for example, the second substrate 221 and the semiconductorstacked blocks 232, 234 thereon could also be applied in the method ofmanufacturing the light-emitting device in the embodiment of thisdisclosure, as mentioned in the paragraph which depicts FIG. 2E. As aresult, the person having ordinary skill in the art could manufacturethe similar or the same light-emitting device as the foregoinglight-emitting device in the first embodiment according to thespecification above, and the same description between the presentembodiment and the previous embodiment is not described again.

FIGS. 6A-6D show the method of manufacturing the light-emitting devicedisclosed in the second embodiment and the third embodiment of thisdisclosure. In the second embodiment, FIG. 6A and FIG. 6B show themethod of manufacturing the light-emitting device when the secondsubstrate in FIG. 2E is designated as the element substrate, and FIG. 6Cand FIG. 6D, in the third embodiment, show the method of manufacturingthe light-emitting device when another substrate is designated as theelement substrate.

FIG. 6A is an embodiment based on the second substrate 221 and thesemiconductor stacked block 232 thereon, which shown in FIG. 2E. Itshould be noted that the first numbers of element codes of the similaror same elements is changed from “2” in FIG. 2E to “6” in FIG. 6A, andthe structure and the material of the elements in FIG. 6A is similar toor the same as that in FIG. 2E. However, the second substrate 621further comprises a first via electrode 622TE1 and a second viaelectrode 622TE2, which is different from the second substrate 221 inFIG. 2E, wherein the first via electrode 622TE1 has a first via 621T1 inthe second substrate 261 and a first conductive material filled therein,and the second via electrode 622TE2 has a second via 621T2 in the secondsubstrate 261 and a second conductive material filled therein. In oneembodiment, the first conductive material is the same as the secondconductive material. Then, the semiconductor stack block 632 bonds tothe second substrate 621 by an aligned bonding process in FIG. 6A andtherefore the semiconductor stack 632 locates between the first viaelectrode 622TE1 and the second via electrode 622TE2 on the secondsubstrate 621. After that, the semiconductor stack block 632 ispartially etched to expose partial second conductive-type semiconductorlayer 602 c. As FIG. 6B shows, an insulating layer 640 is formed on thesidewall of the semiconductor stacked block 632 to provide electricalinsulation between first conductive connecting line 631E1 which isformed in the following process and the semiconductor stacked block 632.Next, a first conductive connecting line 631E1 and a second conductiveconnecting line 631E2 are formed, wherein the first conductiveconnecting line 631E1 electrically connects the first conductive-typesemiconductor layer 602 a of the semiconductor stacked block 632 and thefirst via electrode 622TE1, and the second conductive connecting line631E2 electrically connects the second conductive-type semiconductorlayer 602 c of the semiconductor stacked block 632 and the second viaelectrode 622TE2. Finally, a transparent encapsulated material 641 isformed on the second substrate 621 and covers the semiconductor stackedblock 632, the first conductive connecting line 631E1, and the secondconductive connecting line 631E2. In this way, the light-emitting devicein the second embodiment is finished, wherein the first via electrode622TE1 and the second via electrode 622TE2 are designated to input anexternal power into the light-emitting device disclosed in thedisclosure.

FIG. 6C and FIG. 6D show the method of manufacturing the light-emittingdevice when another substrate is designated as the element substrate.FIG. 6C is an embodiment based on the second substrate 221 and thesemiconductor stacked blocks 232, 234 thereon. Although the plurality ofsemiconductor stacked blocks are utilized at the same time in theembodiment, such as the method of forming the plurality light-emittingdevices by the semiconductor stacked blocks 232 and 234 and thereforetwo semiconductor stacked blocks 232 and 234 are shown in FIG, 6C, itcould also choose the single semiconductor stacked block 232 (orsemiconductor stacked block 234) utilized in the method. The secondsubstrate 221 bonds to the semiconductor stacked block 232 (and/or thesemiconductor stacked block 234), which are separated from the firstsubstrate 201 by the foregoing separating process. The second substrate221 is designated as a temporary substrate since the element substrateof the light-emitting device is another substrate in this embodiment.The method comprises providing an element substrate 621′ whichcomprising a first via electrode 622TE1′ and a second via electrode622TE2′. It should be noted that the method of manufacturing thelight-emitting device in the embodiment utilizes the plurality of thesemiconductor stacked blocks at the same time, such as the semiconductorstacked block 232 and the semiconductor stacked block 234, to form aplurality of the light-emitting devices. Therefore, FIGS. 6C, 6Dillustrate two sets of the first via electrode 622TE1′ and the secondvia electrode 622TE2′, and the two sets of the first via electrode622TE1′ and the second via electrode 622TE2′ are for the semiconductorstacked block 232 and the semiconductor stacked block 234 respectively.The first via electrode 622TE1′ has a first via 621T1′ in the elementsubstrate 621′ and a first conductive material filled in the first via261T1′, and the second via electrode 622TE2′ has a second via 621T2′ inthe element substrate 621′ and a second conductive material filled inthe second via 261T2′. In one embodiment, the first conductive materialis the same as the second conductive material. Then, the semiconductorstack block 232 (and/or the semiconductor stack block 234) bonds to theelement substrate 621′ by an aligned bonding process, and therefore thesemiconductor stack block 232 (and/or the semiconductor stack block 234)locates between the first via electrode 622TE1′ and the second viaelectrode 622TE2′ of the second substrate 621′. Next, the semiconductorstack block 232 (and/or the semiconductor stack block 234) is separatedfrom the second substrate 221. Similarly, it is easier to separate thesemiconductor stacked blocks 232 (and/or the semiconductor stack block234) from the first sacrificial layer 211 by irradiating a laser to aninterface between the semiconductor stacked blocks 232 (and/or thesemiconductor stack block 234) and the first sacrificial layer 211.

Next, as FIG. 6D shows, the semiconductor stack 232 (and/or thesemiconductor stack block 234) is partially etched to expose partialfirst-type semiconductor layer 202 a of the semiconductor stack 232(and/or the semiconductor stack block 234). Then, an insulating layer640 is formed on the sidewall of the semiconductor stack 232 (and/or thesemiconductor stack block 234) to provide electrical insulation betweensecond conductive connecting line 631E2′ which is formed in thefollowing process and the semiconductor stacked block 232 (and/or thesemiconductor stack block 234). After that, a first conductiveconnecting line 631E1′ and a second conductive connecting line 631E2′are formed, wherein the first conductive connecting line 631E1′electrically connects the first conductive-type semiconductor layer 202a of the semiconductor stacked block 232 (and/or the semiconductor stackblock 234) and the first via electrode 622TE1′, and the secondconductive connecting line 631E2′ electrically connects the secondconductive-type semiconductor layer 202 c of the semiconductor stackedblock 232 (and/or the semiconductor stack block 234) and the second viaelectrode 622TE2′. Finally, a transparent encapsulating material 641′ isformed on the element substrate 621′ and covers the semiconductorstacked block 232 (and/or the semiconductor stack block 234), the firstconductive connecting line 631E1′ and the second conductive connectingline 631E2′. In this way, the light-emitting device in the thirdembodiment of this disclosure is finished, wherein the first viaelectrode 622TE1′ and the second via electrode 622TE2′ are designated toinput an external power into the light-emitting device in thedisclosure. The method of manufacturing the light-emitting device in oneembodiment further comprises cutting along the L-L′ line (as shown inFIG. 6D) to separate the semiconductor stacked block 232 and thesemiconductor stacked block 234 and produce the plurality oflight-emitting devices.

Although the above mentioned second and the third embodiments take thesecond substrate 221 and the semiconductor stacked blocks 232, 234thereon for example, the first substrate 201 and the semiconductorstacked blocks 231, 233 on the first substrate 201 could also be used inthe method of manufacturing the light-emitting device in the embodimentof this disclosure, as mentioned in the paragraph which depicts FIG. 2E.As a result, the person having ordinary skill in the art couldmanufacture the light-emitting device which is similar to or the same asthat in the second embodiment or the third embodiment according to theabove specification, and the same description between the presentembodiment and the previous embodiment is not described again.

FIGS. 7A-7G show the fourth embodiment of the method of manufacturinglight-emitting device following the separating method as shown in FIGS.2A-2E. The method disclosed in the fourth embodiment takes the secondsubstrate 221 and the semiconductor stacked block 232 (and/or thesemiconductor stacked block 234) thereon, and the first substrate 201and the semiconductor stacked block 231 (and/or the semiconductorstacked block 233) thereon shown in FIG. 2E for example.

It should be explained that the structure and the material of theelements in FIG. 7A are similar to or the same as that disclosed in FIG.2E, as a result, the first number of element codes of the similar or thesame elements is changed from “2” in FIG. 2E to “7” in FIG. 7A. Thesecond substrate 721 further comprises a first via electrode 721TE,wherein the first via electrode 721TE has a first via 721T in the secondsubstrate 721 and a first conductive material filled in the first via721T. Moreover, the first substrate 721 bonds and aligns with the firstsacrificial layer 711 in order to electrically connecting thesemiconductor stacked block 732 (and/or the semiconductor stacked block734) with the first via electrode 721TE. As shown in FIG. 7A, thesemiconductor stacked block 732 (and/or the semiconductor stacked block734), which is separated from the first substrate 701 by the separatingprocess, is on the second substrate 721, and the semiconductor stackedblock 731 (and/or the semiconductor stacked block 733) keeps on thefirst substrate 701 after the separating process. Next, thesemiconductor stacked block 732 (and/or the semiconductor stacked block734) bonds and aligns with the semiconductor stacked block 731 (and/orthe semiconductor stacked block 733) by a second bonding step, as shownin FIG. 7B. It should be noted that the embodiment also shows the methodof manufacturing the plurality of light-emitting devices at the sametime, and therefore there are two sets of bonded semiconductor stackedblock shown in the embodiment. More specifically, one set of bondedsemiconductor stack are formed by bonding the semiconductor stackedblock to the semiconductor stacked block 731, and other set of bondedsemiconductor stack are formed by bonding the semiconductor stackedblock 734 to the semiconductor stacked block 733. However, the methodcomprises utilizing each one of the two sets or the two sets at the sametime. (The latter should be cut to form a plurality of light-emittingdevices and is not described again).

Then, the semiconductor stacked block 731 (and/or the semiconductorstacked block 733) is separated from the first substrate 701, as shownin FIG. 7C. FIG. 7D shows the structure after overturning FIG. 7C for180 degree. It should be explained that FIG. 7D only illustrates astructure after bonding one set of the semiconductor stacked blocks forconcise explanation. Besides, as shown in FIG. 7E, before the secondbonding process, a conductive oxide layers 791 and 792 are selectivelyformed on the semiconductor stacked block 731 (and/or the semiconductorstacked block 733) and the semiconductor stacked block 732 (and/or thesemiconductor stacked block 734) respectively. The conductive oxidelayer 791 or 792 could form ohmic contact with the semiconductor stackedblock and/or could be a bonding layer. The conductive oxide layers 791and 792 could be, for example, indium oxide (InO), tin oxide (SnO),cadmium tin oxide (CTO), antimony tin oxide (ATO), or zinc oxide (ZnO).In this embodiment, both of the conductive oxide layer 791 and theconductive oxide layer 792 are designated as the bonding layer, whilethe conductive oxide layer 791 could also form ohmic contact with thesemiconductor stacked block 731 (and/or the semiconductor stacked block733). Moreover, a metal layer is selectively formed on at least one ofthe semiconductor stacked block 731 (and/or the semiconductor stackedblock 733) and the semiconductor stacked block 732 (and/or thesemiconductor stacked block 734). The metal layer could form ohmiccontact with semiconductor stacked block and/or provide a function ofreflecting. As shown in FIG. 7E, an ohmic contact metal layer 794 and areflective metal layer 793 are formed on the semiconductor stacked block732 (and/or the semiconductor stacked block 734) before forming theconductive oxide layer 792 on the semiconductor stacked block 732(and/or the semiconductor stacked block 734). The ohmic contact metallayer 794 ohmically contacts with the semiconductor stacked block 732(and/or the semiconductor stacked block 734), and the material of theohmic contact metal layer 794 could be GeAu. The reflective metal layer793 acts as a reflecting mirror, and the material of the reflectivemetal layer 793 could be Ag. Besides, the ohmic contact metal layer 794and the reflective metal layer 793 could be metal or alloy, and themetal could be AI, Au, Ge, Pt, Zn, Ag, Ni, In, Sn, Ti, Pb, Cu, Pd, whilethe alloy could be the alloy containing more than one of the foregoingmetals. The semiconductor stacked block 731 (and/or the semiconductorstacked block 733) bonds to the semiconductor stacked block 732 (and/orthe semiconductor stacked block 734) through the conductive oxide layers791 and 792. FIG. 7F shows an overturned structure disclosed in FIG. 7Eafter removing the first substrate 701. Similarly, for conciseexplanation, it is only illustrated the structure of bonding one set ofthe semiconductor stacked blocks in FIG. 7F.

Next, FIG. 7G follows FIG. 7F for further description. It should benoted that in other embodiment, the structure shown in FIG. 7D couldalso be utilized in the present embodiment. An insulating layer 795 isformed on the sidewall of the semiconductor stacked block 731, 732, asshown in FIG. 7G. Then, an electrode 722EE and an electrode 722E form onthe second substrate 721 and electrically connect to the firstconductive-type semiconductor layer 702 a. The insulating layer 795electrically insulates the electrodes 722EE and 722E with thesemiconductor stacked block 731 and the semiconductor stacked block 732.In this way, the light-emitting device in the fourth embodiment isfinished. The light-emitting device comprises the semiconductor stackedblock 731 and the semiconductor stacked block 732 to form adual-junction light-emitting device. The electrodes 722EE, 722E and thefirst via electrode 721TE could input an external power into thelight-emitting device in this disclosure.

FIGS. 7H-7K show the fifth embodiment of the method of manufacturing thelight-emitting device in the disclosure. The fifth embodiment is atransformation of the fourth embodiment mentioned above. In thisembodiment, the semiconductor stacked block 232 (and/or thesemiconductor stacked block 234) on the second substrate 221 in FIG. 2Ebonds to and aligns with the semiconductor stacked block 231 (and/or thesemiconductor stacked block 232) on the first substrate 201 by a secondbonding step shown in FIG. 7H after the separating method mentioned inFIGS. 2A-2E. Next, as shown in FIG. 7I, the semiconductor stacked block132 (and/or the semiconductor stacked block 234) is separated from thesecond substrate 221. Then, an element substrate which designated as anelement substrate of the light-emitting device could bond to thesemiconductor stacked block 232 (and/or the semiconductor stacked block234). In another embedment, a first substrate 201 could also be removedso that the semiconductor stacked block 231 (and/or the semiconductorstacked block 233) is separated from the first substrate 201, and theelement substrate bonds to the semiconductor stacked block 231 (and/orthe semiconductor stacked block 233). After that, in FIG. 7J, a secondsubstrate 721 is provided to be designated as an element substrate ofthe light-emitting device. The second substrate 721 comprises a firstvia electrode 721TE having a first via 721T and a first conductivematerial filled in the first via 721T. Next, the semiconductor stackedblock 232 (and/or the semiconductor stacked block 234) bonds and alignswith the second substrate 721 by a third bonding step, so that thesemiconductor stacked block 232 (and/or the semiconductor stacked block234) electrically connects to the first via electrode 721TE of thesecond substrate 721, as shown in FIG. 7J. Finally, the semiconductorstacked block 231 (and/or the semiconductor stacked block 233) isseparated from the first substrate 201 and the insulating layer 795 andthe electrodes 722EE, 722E are formed, which are like the same way shownin FIG. 7G. Therefore, the light-emitting device shown in FIG. 7K isproduced. It should be noted that conductive oxide layers areselectively formed on the semiconductor stacked block 231 (and/or thesemiconductor stacked block 233) and the semiconductor stacked block 232(and/or the semiconductor stacked block 234) respectively before thealigned bonding process in the second bonding step, when thesemiconductor stacked block 232 (and/or the semiconductor stacked block234) bonds and aligns with semiconductor stacked block 231 (and/or thesemiconductor stacked block 233). Besides, a metal layer could also beselectively formed on at least one of the semiconductor stacked block231 (and/or the semiconductor stacked block 233) and the semiconductorstacked block 232 (and/or the semiconductor stacked block 234). Thedetail specification is already mentioned above and is not describedagain. Furthermore, as mentioned in FIG. 7I, in other embodiment, thesemiconductor stacked block 231 (and/or the semiconductor stacked block233) could be separated from the first substrate 201, and the firstsubstrate 201 is removed. The semiconductor stacked block 231 (and/orthe semiconductor stacked block 233) bonds and aligns with the secondsubstrate 721 in the third bonding step shown in FIG. 7J, and then thesemiconductor stacked block 232 (and/or the semiconductor stacked block234) is separated from the second substrate 221.

In the various embodiments mentioned above, it should be noted that,although the elements with the same function have different codes indifferent embodiments, they should be regarded as having the same orsimilar characters, such as physical, chemical or electrical charactersunless there is a limitation in each embodiment, and it is not necessaryto repeatedly describe in every embodiments.

It should be noted that the proposed various embodiments are not for thepurpose to limit the scope of the disclosure. Any possible modificationswithout departing from the spirit of the disclosure may be made andshould be covered by the disclosure. The range of the protective rightis defined by the following claims.

What is claimed is:
 1. A method of manufacturing a light-emittingdevice, which comprises: providing a first substrate and a plurality ofsemiconductor stacked blocks comprising a first semiconductor stackedblock and a second semiconductor stacked block on the first substrate,and each of the plurality semiconductor stacked blocks comprises a firstconductive-type semiconductor layer, a light-emitting layer on the firstconductive-type semiconductor layer, and a second conductive-typesemiconductor layer on the light-emitting layer; and conducting a firstseparating step comprises: providing a second substrate; conducting afirst bonding step to bond the first semiconductor stacked block to thesecond substrate; separating the first semiconductor stacked block fromthe first substrate and keeping a second semiconductor stacked block onthe first substrate; and conducting a second bonding step to bond andalign the first semiconductor stacked block with the secondsemiconductor stacked block.
 2. The method of manufacturing alight-emitting device of claim 1, further comprises separating the firstsemiconductor stacked block from the second substrate.
 3. The method ofmanufacturing a light-emitting device of claim 2, further comprises:providing a third substrate; conducting a third bonding step to bond andalign the first semiconductor stacked block with the third substrate;and separating the second semiconductor stacked block from the firstsubstrate.
 4. The method of manufacturing a light-emitting device ofclaim 3, wherein the third substrate further comprises a first electrodebefore conducting the third bonding step, and the first semiconductorstacked block aligns with the first electrode and forms electricalconnection with the first electrode in the third bonding step.
 5. Themethod of manufacturing a light-emitting device of claim 4, furthercomprises forming a second electrode on the third substrate, and thesecond electrode electrically connect to the second semiconductorstacked block.
 6. The method of manufacturing a light-emitting device ofclaim 4, wherein the third substrate comprises a via, and the firstelectrode is formed by filling a conductive material in the via.
 7. Themethod of manufacturing a light-emitting device of claim 4, wherein thefirst electrode comprise a first end connecting to the firstsemiconductor stacked block and a second end opposite to the first end,and the first end has an area different from that of the second end froma cross section of the light emitting device.
 8. The method ofmanufacturing a light-emitting device of claim 5, further comprisesforming an insulating layer on a sidewall of the semiconductor stackedblocks, and the second electrode covers the insulating layer.
 9. Themethod of manufacturing a light-emitting device of claim 1, furthercomprises forming a first sacrificial layer on the first semiconductorstacked block before the first bonding step.
 10. The method ofmanufacturing a light-emitting device of claim 9, wherein the firstsacrificial layer is formed by forming a layer of a material of thefirst sacrificial layer on the surfaces of the plurality of thesemiconductor stacked blocks, and then selectively removing the materialof the first sacrificial layer.
 11. The method of manufacturing alight-emitting device of claim 9, wherein the first sacrificial layercomprises conductive material.
 12. The method of manufacturing alight-emitting device of claim 9, wherein the first sacrificial layercomprises metal oxide.
 13. The method of manufacturing a light-emittingdevice of claim 1, further comprises separating the second semiconductorstacked block from the first substrate.
 14. The method of manufacturinga light-emitting device of claim 13, further comprises forming a secondelectrode on the second substrate after the second bonding step.
 15. Themethod of manufacturing a light-emitting device of claim 1, wherein thesecond substrate comprises a first electrode.
 16. The method ofmanufacturing a light-emitting device of claim 15, wherein the firstbonding step comprises aligning and bonding the first semiconductorstacked block with the first electrode of the second substrate in orderto form electrical connection between the first electrode and the firstsemiconductor stacked block.
 17. The method of manufacturing alight-emitting device of claim 15, wherein the second substratecomprises a via, and the first electrode is formed by filling aconductive material in the via.
 18. The method of manufacturing alight-emitting device of claim 1, further comprises forming a conductiveoxide layer on the first semiconductor stacked block and/ or the secondsemiconductor stacked block before the second bonding step.
 19. Themethod of manufacturing a light-emitting device of claim 1, furthercomprises forming a metal layer on at least one of the firstsemiconductor stacked block and/ or the second semiconductor stackedblock before the second bonding step.
 20. The method of manufacturing alight-emitting device of claim 1, further comprising forming a secondelectrode on the second semiconductor stacked block after the secondbonding step.